Feldeffekttransistoren
| MOSFET | |||||||||
| Typ | UDSmax [V] | IDmax [mA] | UGSmax [V] | y21S [mA/V] | UP [V] | Ptot [mW] | Aufbau | Bemerkung | Bauform |
|---|---|---|---|---|---|---|---|---|---|
| SM 101 | 20 | 15 | -10 ... +5 | 0,5 | -15 | 100 | n-Kanal | 1 | |
| SM 102 | 20 | 20 | -10 ... +5 | 0,8 | -10 | 100 | n-Kanal | 1 | |
| SM 103 | 15 | 15 | -15 ... +5 | 1,7 | -7,5 | 150 | n-Kanal | 2 | |
| SM 104 | 15 | 15 | -15 ... +5 | 1,3 | -5,5 | 150 | n-Kanal | 2 | |
| SM 200 | 20 | 30 | -0,3 ... +15 | -2,5 | 300 | n-Kanal, Dual-Gate | 3 | ||
| SME 992 | 20 | 40 | 20 | -1,1 | 200 | n-Kanal, Dual-Gate | 4 | ||
| SME 994 | 20 | 30 | 15 | -2,0 | 200 | n-Kanal, Dual-Gate | 4 | ||
| SME 996 | 20 | 30 | 15 | -2,0 | 200 | n-Kanal, Dual-Gate | 4 | ||
| SMY 50 | -31 | -25 | -31 ... +31 | 3,6 | -3 | 225 | p-Kanal | 5 | |
| SMY 51 | -31 | -25 | -31 ... +31 | 3,6 | -2 | 200 | p-Kanal, Doppeltransistor | 6 | |
| SMY 52 | -31 | -60 | -31 ... +31 | 12,5 | -3 | 300 | p-Kanal | 5 | |
| SMY 60 | -25 | -20 | -30 ... +30 | -3 | 250 | p-Kanal, Doppeltransistor | 7 | ||
| VFE 15 | 5 | 100 | -5 ... +0,5 | 20 | 350 | GaAs, n-Kanal | 8 | ||
| UDSmax = Maximale Drain-Source-Spannung IDmax = Maximaler Drainstrom UGSmax = Maximale Spannung zwischen Gate und Source y21S = Vorwärtssteilheit UP = Schwellspannung Ptot = Gesamtverlustleistung |
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